12N high purity monocrystalline fz silicon ingots

1. high purity:12N 2. float zone technology 3. conductivity type:N or P 4. size:2"- 4" N<111> 5:resistance:1000-3000ohm

Our advantages on owner's power supply make the cost lower, so Xinhua have cost value advantage.welcome to contact us for product

Application

Power rectifiers, power transistors, diodes, switching devices  

the FZ growers principles:

The growth proess starts by inserting a polycrystalline ingot into the upper chamber/pulling arrangment.Thereafter the ingot is pri-heated by means of a graphite heater.After pre-heating,the graphite heater is swung away and the cone_shaped ingot is lowered into the active zone of the high frequency coil.which is now able to melt the silicon ingot to the seed crystal.The one-pass monocrystalline growth process can now begin.

12N high purity monocrystalline fz silicon ingots